SBIR/STTR Research Award

Low-Cost, Low-Dose Flat Panel X-ray Detectors with a Novel Semiconductor

Award identifier 368443cda61d24bfa25eec6d1f5569a2f4ef043e65e4cd3c81f657adb0f315efAwarding agency Department of Health and Human Services · National Institutes of Health

Award amount

$1,566,445

Program and phase

SBIR · Phase II

Award year

2020

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Award details

Awarding agency
Department of Health and Human Services
Branch
National Institutes of Health
Recipient company
CAPESYM INC
Proposal award date
2020-09-01
Contract end date
2022-06-30
UEI
CSZST8YFP7K1
Solicitation number
PA19-272
Topic code
NIBIB

Research abstract

Project Summary/Abstract After decades of advances in medical imaging, X-ray based imaging modalities are still the backbone of modern general and targeted diagnostic and therapeutic imaging. With the advent of flat panel detector technology, flat panel X-ray imagers (FPXIs) are now widely used in digital radiography, fluoroscopy, digital tomosynthesis, image-guided radiation therapy, and cone beam computed tomography. The majority of commercial FPXIs are based on scintillators and rely on indirect conversion of X-rays to photons and then to electronic signals, and a smaller portion is based on amorphous selenium (a-Se) semiconductor films that directly convert absorbed X- rays to an electronic signal. The indirect FPXIs have high detective quantum efficiency (DQE) over the energy range of interest (up to 140kVp) and are used in most of the flat panel imaging applications. However, the isotropic propagation of light in the scintillators adversely affects the quality of obtained images, and high radiation doses are needed to obtain images with acceptable brightness and contrast. On the other hand, a-Se based direct-conversion panels have excellent spatial resolution and DQE, but only up to 40kVp, due to low absorptivity of a-Se at higher energies. Thus, the use of direct-conversion FPXIs is currently limited only to soft- tissue applications, primarily mammography. In this program, we will develop direct-conversion FPXIs with a novel semiconductor sensor with high sensitivity at X-ray energies up to 140kVp. In Phase I, the feasibility of this semiconductor X-ray sensor was evaluated and excellent results in terms of sensitivity, response linearity, charge transport properties, and stability were obtained. The Phase II program is focused on demonstration of X-ray imagers based on the novel sensor, including large area FPXIs suitable for transitioning to clinical testing, and scalable X-ray scanner modules suitable for medical, scientific research, and industrial imaging applications.Narrative In the proposed program, we will develop high-efficiency, high-sensitivity, low-cost direct-conversion flat panel X-ray imagers and X-ray scanner modules based on a novel semiconductor X-ray sensor. These next-generation X-ray imagers are expected to increase image resolution and significantly reduce the dose requirements in imaging modalities such as digital radiography, fluoroscopy, tomosynthesis, image-guided radiation therapy, and cone beam computed tomography. They will also open the road to high-resolution, low-cost full-body X-ray imaging, as well as advances in scientific research and industrial inspection applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

85 SBIR/STTR records share this UEI (1997–2025). Reported award amounts total $46,105,917. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, Department of Homeland Security, Department of Health and Human Services, National Aeronautics and Space Administration

Agency intelligence

Department of Health and Human Services

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