SBIR/STTR Research Award

High-Temperature, Substrate-Agnostic Fine-Line Additive Metallization with Advanced Interconnects

Award identifier 3d7be361963a510033cd0e746582ca092b2f250f45a88f9326aaf27b1b063ba8Awarding agency National Aeronautics and Space Administration

Award amount

$149,900

Program and phase

STTR · Phase I

Award year

2025

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
INTERNATIONAL FEMTOSCIENCE, INCORPORATED
Proposal award date
2025-09-26
Contract end date
2026-10-28
UEI
JKXEXKV4KFG8
Solicitation number
STTR 2025-I
Topic code
T12

Research abstract

High-temperature electronics are crucial for NASA missions involving extreme environments. The field of Additively Manufactured Electronics shows potential in providing enabling capability for future NASA missions that have very severe or unique volume constraints. Specifically, NASA has identified a specific need to be able to deposit conductor material on high-temperature, compatible insulating substrates. Manufacturing methods are able to print conductors and dielectrics at needed resolutions. However, there is a lack of data demonstrating operational reliability in extreme high temperature environments. Further, the effectiveness of material adhesion and material behavior at elevated temperatures should be understood given the extreme temperature target environments as well as demonstrating the capability of repeatable processing. International FemtoScience is proposing the development of an extreme environment electronics system for enabling field deployment of advanced Additive Manufacturing technologies. This technology will utilize novel Active Diamond Metal Matrix Braze conductors applied to any type of high temperature ceramic substrate, thus substrate-agnostic. This is accomplished via Aerosol Jet Printing that can deposit 10-micron wide conductors onto oxides, carbides, and nitrides, and can do so on 3-D geometries. 2-micron interconnect technology achieved with novel method of laser writing conductors inside nanodiamond films will also provide further interconnection capabilities for high power, Wide Bandgap devices such as Silicon Carbide and Gallium Nitride semiconductors. International FemtoScience, University of Arkansas, and University of Tennessee Spece Institute will perform research and development to demonstrate that the materials selected in the proposed extreme environment additive manufacturing electronics system have the capability to perform repeatable processing to demonstrate integration methods for extreme performance conductors.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

9 SBIR/STTR records share this UEI (2018–2025). Reported award amounts total $4,951,070. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration

Agency intelligence

National Aeronautics and Space Administration

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