SBIR/STTR Research Award
Development of Ga2O3 Epitaxial Layers and Heterostructures for Power Device Applications
Award amount
$748,948Program and phase
SBIR · Phase IIAward year
2019Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- AGNITRON TECHNOLOGY, INC.
- Proposal award date
- 2018-12-01
- Contract end date
- 2020-12-01
- UEI
- NGDVGM4G1YM4
- Solicitation number
- 17.1
- Topic code
- AF171-018
Research abstract
This Phase II program sets out to capitalize on recent advances in epitaxial growth of β-Ga2O3 which have the potential to significantly improve upon the performance of currently available power electronics devices. Specifically, β-Ga2O3, offers fundamental properties such as its ability to withstand very large electric fields that suggest its use as a power electronics material will lead to device performance beyond even that of SiC and GaN. We propose to determine the growth parameters that yield high quality, doped β-Ga2O3 epitaxial layers and (AlxGa1-x)2O3/β-Ga2O3 epitaxial heterostructures on bulk (010) β-Ga2O3 substrates. These structures will be optimized to enhance the properties of the MOSFET and HEMT (also known as MODFET) devices that can be fabricated from them. For this program we have assembled a team of renowned scientists with expertise in the growth and characterization of semiconductor oxides as well as device fabrication.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Industrial Scale Ga2O3 Epitaxial Structures for Next-Generation Microwave Electronics
- Enabling Industry scalable GaN-based Technology for Heterogeneous Integration of RF power devices Via van der Waals 2D h BN Release layer
- Develop Ultra-Fast Metastable Ion Implant Activation System
- Miniature power supplies using beta-Ga2O3 electronics for size, weight, and power reduction on low-cost, attritable aircrafts
- Develop Ultra-Fast Metastable Ion Implant Activation System
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- HVPE-Based Gallium Oxide Homoepitaxial Structures for RF and Power Switching Devices
- Development of Ga2O3 Epitaxial Layers and Heterostructures for Power Device Applications
- HVPE-Based Gallium Oxide Homoepitaxial Structures for RF and Power Switching Devices
Research funding history
16 SBIR/STTR records share this UEI (2013–2024). Reported award amounts total $11,320,870. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, National Science Foundation, National Aeronautics and Space Administration, Department of Energy