SBIR/STTR Research Award

HVPE-Based Gallium Oxide Homoepitaxial Structures for RF and Power Switching Devices

Award identifier 3148b4d75eee5aa4505fde951de6f7a64d2bee764b7587ea529e30a5b4add9f6Awarding agency Department of Defense · Air Force

Award amount

$750,000

Program and phase

SBIR · Phase II

Award year

2019

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
KYMA TECHNOLOGIES, INC.
Proposal award date
2019-02-05
Contract end date
2020-06-08
UEI
GDV6R1VLRVN7
Solicitation number
17.1
Topic code
AF171-018

Research abstract

Kyma will advance the hydride vapor phase epitaxy (HVPE) growth technology for producing high quality crystalline layers of β-Ga2O3, β-(Al,Ga)2O3, and β-(In,Ga)2O3 layers on single crystal β-Ga2O3 substrates. The electrical and structural quality of these materials will be optimized over a range of doping levels and alloy compositions, and their uniformity across the wafer will also be optimized. These optimized processes will be combined to create state-of-the-art delta-doped β-Ga2O3 field effect transistor epiwafers and modulation doped β-(Al,Ga)2O3/Ga2O3 high electron mobility transistor epiwafers and related test structures for delivery to the Air Force for materials and device level testing and evaluation.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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