SBIR/STTR Research Award
HVPE-Based Gallium Oxide Homoepitaxial Structures for RF and Power Switching Devices
Award amount
$149,999Program and phase
SBIR · Phase IAward year
2017Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2017-09-15
- Contract end date
- 2018-06-14
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2017.1
- Topic code
- AF171-018
Research abstract
Monoclinic -Ga2O3 has recently emerged as a promising material for ultrawide bandgap electronics for next-generation high voltage lateral and vertical power switching devices, thanks to its large bandgap (4.9eV), high critical breakdown field (8MV
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development of Ga2O3 Epitaxial Layers and Heterostructures for Power Device Applications
- HVPE-Based Gallium Oxide Homoepitaxial Structures for RF and Power Switching Devices
- Development of Ga2O3 Epitaxial Layers and Heterostructures for Power Device Applications
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration