Solid State High Voltage Switching Device for Multi-Point Initiation

This two-phase SBIR program will develop fully-qualified 1800 V/2500 A(peak)/<100 nS rise/fall times/<5 uA leakage current SiC pulsed power switch, designed for insertion into a wide range of fuzing applications. These devices are expected to be fabricated in large scale foundry for Silicon Carbide devices, which is critical towards realizing a low-cost solution. The proposed SiC pulsed switch will be packaged in small, surface mount package that can be produced in volume quantities at low costs. The proposed pulsed switch will be developed in close collaboration with existing DoD prime contractors. Phase I of the program will focus on the device development tasks. This will include optimized device choice, and device design, fabrication and on-wafer characterization. Cost modeling and Packaging solutions will be conducted during the end of Base period of Phase I as well as the Option period. Major DoD primes engaged in providing pulsed power switches have expressed strong interest in partnering with GeneSiC with their existing programs, thereby offering a strong possibility of insertion into fieldable systems. Building on the Phase I results, the Phase II program will deliver a fully-qualified 1800 V/2500 A (peak)/100 nS rise/fall time/5uA leakage current SiC pulsed power switch to the Army