Solid State High Voltage Switching Device for Multi-Point Initiation

In this program, GeneSiC will develop fully-qualified 1500 V/2500 A(peak)/<100 nS rise/fall times/<5 uA leakage current Silicon Carbide Thyristor based pulsed power switch, designed for insertion into a wide range of fuzing applications. These devices are expected to be fabricated in large scale foundry for SiC devices, which is critical towards realizing a low-cost solution. The proposed SiC pulsed switch will be packaged in small, surface mount package that can be produced in volume quantities at low costs. The proposed pulsed switch will be developed in close collaboration with existing DoD prime contractors, who have expressed strong interest in partnering with GeneSiC with their existing programs, thereby offering a strong possibility of insertion into fieldable systems. Phase II program will deliver a fully-qualified 1500 V/2500 A (peak)/100 nS rise/fall time/5uA leakage current SiC pulsed power switch with small form factors, high reliability, high performance, and low cost. The economies of scale will be realized through the utilization of GeneSiC's existing mass-production capabilities in the field of SiC power devices. GeneSiC's strong successes in commercializing SiC power devices will be leveraged to ensure robust supply chain and quality standards.