SBIR/STTR Research Award
Growth of Large Area CZT Crystals
Award amount
$99,836Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- CAPESYM INC
- Proposal award date
- 2009-03-27
- Contract end date
- 2009-09-27
- UEI
- CSZST8YFP7K1
- Solicitation number
- 2008.3
- Topic code
- MDA08-013
Research abstract
This proposal seeks to develop a new process for production of large area CdZnTe substrates for large area focal plane arrays. The proposed system promises to overcome innate scale-up obstacles in the current method for production of CdZnTe crystals.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Resolution Direct-Conversion X-ray Detectors for Low-Dose Imaging
- Crystal Growth and Characterization of Doped VUV Crystals
- Low-Cost High-Efficiency X-ray Imaging Panels for Field Radiography
- High Yield Growth and Fabrication of Spectroscopic Radiation Detection Semiconductors
- High Quantum Efficiency Scintillators for Dual Readout Calorimetry
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Design Modified Commercial CMOS for MDA IR FPAs
- Growth of Large Area CZT Crystals
- Advanced Space Sensor Components and Concepts
- VLWIR HgCdTe FPA Reliability and Yield Enhancement through Nanostructural Analysis
- Design Modified Commercial CMOS for MDA IR FPAs
Research funding history
85 SBIR/STTR records share this UEI (1997–2025). Reported award amounts total $46,105,917. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, Department of Homeland Security, Department of Health and Human Services, National Aeronautics and Space Administration