THz and Sub-THz MEMS-Fabricated Klystron Amplifier
Award amount
$100,000Program and phase
STTR · Phase IAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- TRUENANO, INC.
- Proposal award date
- 2009-08-21
- Contract end date
- 2010-02-17
- UEI
- F45QZBNBW4G6
- Solicitation number
- 2009.A
- Topic code
- A09A-T016
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Fast ANd Trustwordy AI-powered growth of Thick SiC epi (FANTATSIC)
- Hot Filament CVD Technology for disruptive, high throughput SiC epitaxial growth reactors
- Hot Filament CVD technology for disruptive, high-throughput SiC epitaxial growth reactors
- High-Voltage SiC Switch with Nanosecond Response Time
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- THz and Sub-THz MEMS-Fabricated Klystron Amplifier
- THz and Sub-THz MEMS-Fabricated Klystron Amplifier
- THz and Sub-THz MEMS-Fabricated Klystron Amplifier
Research funding history
5 SBIR/STTR records share this UEI (2008–2025). Reported award amounts total $1,389,581. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense