Hot Filament CVD Technology for disruptive, high throughput SiC epitaxial growth reactors

TrueNano, Inc. will in collaboration with the University of Colorado and industry partners, produce a novel single wafer, high throughput, cold wall Hot Filament CVD (HF-CVD) reactor prototype for the growth of high-quality silicon carbide (SiC) epitaxial layers, suitable for the next generation of power electronic devices and systems. This includes the design and simulation of the reactor chamber, the modification of existing CVD reactor designs to include suitable filaments and to demonstrate high growth rate, high throughput, and low cost of ownership of our HFCVD technology. HFCVD material will be characterized extensively, providing wafer maps of epitaxial layer doping and thickness with non-destructive wafer-scale measurements as well as Schottky diode arrays that also provide breakdown field data. The HF-CV D technology is anticipated to result in lower cost SiC materials, devices and systems, due to faster throughput, larger wafer size, and higher device yield, as desirable for a multitude of military and commercial applications.