Hot Filament CVD technology for disruptive, high-throughput SiC epitaxial growth reactors

TrueNano, Inc. will in collaboration with the University of Colorado and industry partners, develop a novel single-wafer, high-throughput hot filament CDV reactor for the growth of high quality silicon carbide (SiC) epitaxial layers, suitable for the next generation of power electronic devices and systems. This includes the design and simulation of the reactor, the development of a throughput model, a growth model and cost model and the simulation of the reactor throughput and material uniformity. Filament reliability will be determined based on lifetime measurements and failure analysis. HFCVD material will be characterized extensively and used to demo a device with high breakdown field. This proposed technology will ultimately result in lower cost SiC materials, devices and systems, due to faster throughput, larger wafer size, and higher device yield, as desirable for a multitude of military and commercial applications.