Manufacturing Process for Semi-insulating 4" Diameter GaN Substrates

Large area semi-insulating GaN has the potential to impact the commercialization of many technologies such as power transistors, high frequency microwave amplifiers, and high-speed, high-power switching components. One of the limiting factors in many of these applications is the lack of commercially available large diameter substrates. This program will develop 4" diameter semi-insulating GaN substrates produced using a large area crystal growth reactor designed by Kyma Technologies. Applications of these substrates include high power transistors, high frequency power amplifiers, and high-speed, high-power switching components. The availability of high quality, highly uniform, semi-insulating GaN substrates could significantly improve the efficiency, lifetime and reliability of microwave power HEMTs. The overall objective of this proposal is to develop a manufacturing process for growing high quality, low defect density semi insulating GaN wafers up to 4" in diameter. These crystals will be grown to a sufficient thickness to produce freestanding GaN substrates by slicing wafers from the 4" boule. Applications of these substrates include high power transistors, high frequency power amplifiers, and high-speed, high-power switching components.