SBIR/STTR Research Award
High Purity SiC Crystals by the HTCVD Process
Award amount
$99,295Program and phase
SBIR · Phase IAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- CAPESYM INC
- Proposal award date
- 2006-04-10
- Contract end date
- 2006-10-31
- UEI
- CSZST8YFP7K1
- Solicitation number
- 2005.3
- Topic code
- MDA05-035
Research abstract
This program focuses on growth of uncompensated semi-insulating SiC crystals by using high purity precursor gases in a novel High Temperature CVD reactor. The crystal growth process is tailored to minimize release of impurities into the growth chamber and incorporation of these impurities into the growing crystal.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Resolution Direct-Conversion X-ray Detectors for Low-Dose Imaging
- Crystal Growth and Characterization of Doped VUV Crystals
- Low-Cost High-Efficiency X-ray Imaging Panels for Field Radiography
- High Yield Growth and Fabrication of Spectroscopic Radiation Detection Semiconductors
- High Quantum Efficiency Scintillators for Dual Readout Calorimetry
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Advance Thermal Management of Large Multiband Phased Arrays
- High Electrical Efficiency GaN FETs for Innovative Radar/RF Sensors
- Advance Thermal Management of Large Multiband Phased Arrays
- High Electrical Efficiency GaN FETs for Innovative Radar/RF Sensors
- Innovative Active Array Radar Sensor
Research funding history
85 SBIR/STTR records share this UEI (1997–2025). Reported award amounts total $46,105,917. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, Department of Homeland Security, Department of Health and Human Services, National Aeronautics and Space Administration