Integrated Optical Cascode Configuration for Vertical GaN Power Transistors

Kyma will develop a novel vertical GaN power device with an integrated, optically-controlled gate to realize an EMI-immune device, the GaN power Optical-Cascode FET (OC-FET). The work will consist of combining two existing technologies currently under development at Kyma, a vertical FinFET as well as a photoconductive GaN-based two-terminal switch. Phase I will identify Air Force end users and customers willing to evaluate Kyma’s vertical GaN devices with and without the integrated optical cascode transistor during Phase II, and to define the performance required of switching transistors for various Air Force applications of interest. With these performance needs defined, we anticipate being able to quantify the tradeoffs in terms of on-resistance, EMI immunity, temperature robustness, and other characteristics which would make the Kyma power OC-FET an attractive solution to unmet Air Force needs over existing transistor solutions.