SBIR/STTR Research Award
Development of Large Area GaN Substrates for Vertical Power Electronics
Award amount
$124,997Program and phase
STTR · Phase IAward year
2018Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2018-04-25
- Contract end date
- 2019-08-26
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 18.A
- Topic code
- N18A-T004
Research abstract
This program will further the development of large area freestanding GaN substrates (>100mm) and develop a bulk GaN substrate characterization protocol to help reduce the variability in GaN homoepitaxial growth results which have prevented low cost, high voltage, vertical GaN power devices from being realized in an economically viable way.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Next-Generation, Power-Electronics Materials for Naval Aviation Applications
- Hot Filament CVD Technology for disruptive, high throughput SiC epitaxial growth reactors
- Hot Filament CVD technology for disruptive, high-throughput SiC epitaxial growth reactors
- Low-cost production of ultra-low defect GaN-based power electronics
- Next-Generation, Power-Electronics Materials for Naval Aviation Applications
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration