Next-Generation, Power-Electronics Materials for Naval Aviation Applications
Award amount
$974,861Program and phase
STTR · Phase IIAward year
2020Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2019-10-31
- Contract end date
- 2023-11-01
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 18.A
- Topic code
- N18A-T004
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Hot Filament CVD Technology for disruptive, high throughput SiC epitaxial growth reactors
- Hot Filament CVD technology for disruptive, high-throughput SiC epitaxial growth reactors
- Low-cost production of ultra-low defect GaN-based power electronics
- Next-Generation, Power-Electronics Materials for Naval Aviation Applications
- Development of Large Area GaN Substrates for Vertical Power Electronics
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration